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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1085 DESCRIPTION With TO-220 package Complement to type 2SD1562 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Fig.1 simplified outline (TO-220) and symbol HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE -120 -120 -5 -1.5 -3.0 UNIT V V V A A W ae ae Collector power dissipation Junction temperature Storage temperature TC=25ae 20 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-1mA ,IB=0 IC=-50|I IE=-50|I A ,IE=0 A ,IC=0 MIN -120 -120 -5 TYP. 2SB1085 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT MAX UNIT V V V IC=-1A; IB=-0.1A IC=-1A; IB=-0.1A VCB=-100V; IE=0 VEB=-4V; IC=0 IC=-0.1A ; VCE=-5V IE=0 ; VCB=-10V,f=1MHz 60 -2.0 -1.5 -1.0 -1.0 |I |I V V A A IN E Output capacitance Transition frequency hFE classifications D 60-120 ANG CH F 160-320 EMIC ES IC=-0.1A ; VCE=-5V OND TOR UC 320 30 50 pF MHz 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1085 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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